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 SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
2SC1723
DESCRIPTION *With TO-220C package *High breakdown voltage *High transition frequency APPLICATIONS *Low frequency high voltage power amplifier *TV power supply driver
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.2 15 150 -45~150 UNIT V V V A W
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=8 IC=100A ; IE=0 IE=100A ; IC=0 IC=100mA; IB=10mA IC=50m A ; VCE=10V VCB=250V ;IE=0 VCE=250V; RBE=8 IC=50m A ; VCE=10V IC=30m A ; VCE=20V IE=0 ; VCB=50V; f=1MHz 40 MIN 300 300 5
2SC1723
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO hFE fT COB
TYP.
MAX
UNIT V V V
0.32 0.66
1.5 0.9 0.1 2 200
V V A A
60 6.2
MHz pF
2
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1723
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3


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